Multilayer insulating film of semiconductor device and method for forming the film

A multilayer insulating film of a semiconductor device, where the distributed quantity of carbon or fluorine is maximized at the interface between insulating films. The concentration of carbon present at the interface is 1x1020 atoms/cm3 or more.

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Bibliographic Details
Main Authors FURUMURA; YUJI, DOKI; MASAHIKO, NISHIO; HIDETOSHI
Format Patent
LanguageEnglish
Published 09.04.1996
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A multilayer insulating film of a semiconductor device, where the distributed quantity of carbon or fluorine is maximized at the interface between insulating films. The concentration of carbon present at the interface is 1x1020 atoms/cm3 or more.
Bibliography:Application Number: US19940327820