Multilayer insulating film of semiconductor device and method for forming the film
A multilayer insulating film of a semiconductor device, where the distributed quantity of carbon or fluorine is maximized at the interface between insulating films. The concentration of carbon present at the interface is 1x1020 atoms/cm3 or more.
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
09.04.1996
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Edition | 6 |
Subjects | |
Online Access | Get full text |
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Summary: | A multilayer insulating film of a semiconductor device, where the distributed quantity of carbon or fluorine is maximized at the interface between insulating films. The concentration of carbon present at the interface is 1x1020 atoms/cm3 or more. |
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Bibliography: | Application Number: US19940327820 |