Method for manufacturing an aluminum nitride sintered body

Disclosed is an aluminum nitride sintered body which has a high thermal conductivity and a high strength and which can be manufactured through low-temperature, short-time sintering. This aluminum nitride sintered body has an average grain size of aluminum nitride grains of 2 mu m or less, a thermal...

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Bibliographic Details
Main Authors KASORI; MITSUO, OH-ISHI; KATSUYOSHI, HORIGUCHI; AKIHIRO, UENO; FUMIO
Format Patent
LanguageEnglish
Published 19.03.1996
Edition6
Subjects
ARTIFICIAL STONE
BASIC ELECTRIC ELEMENTS
CABLES
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
CONDUCTORS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
INSULATORS
LIME, MAGNESIA
METALLURGY
REFRACTORIES
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
SEMICONDUCTOR DEVICES
SLAG
TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
TREATMENT OF NATURAL STONE
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Summary:Disclosed is an aluminum nitride sintered body which has a high thermal conductivity and a high strength and which can be manufactured through low-temperature, short-time sintering. This aluminum nitride sintered body has an average grain size of aluminum nitride grains of 2 mu m or less, a thermal conductivity of 80 W/m.K or more, and a relative density of 98% or more.
Bibliography:Application Number: US19940320758