Oriented diamond film structures on non-diamond substrates
The present invention provides a semiconductor device comprising a first layer of a metal silicide and a second layer on the first metal silicide layer; the second layer comprising a semiconducting diamond film. The present invention also provides a method for making a semiconductor device comprisin...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
30.01.1996
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Edition | 6 |
Subjects | |
Online Access | Get full text |
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Summary: | The present invention provides a semiconductor device comprising a first layer of a metal silicide and a second layer on the first metal silicide layer; the second layer comprising a semiconducting diamond film. The present invention also provides a method for making a semiconductor device comprising the steps of providing a layer of a transition metal silicide and forming a semiconducting diamond layer on the layer of transition metal silicide. |
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Bibliography: | Application Number: US19930128365 |