Method of producing a dynamic random access memory device having improved contact hole structures

• Main Author: EMA; TAIJI
• Format: Patent
• Language: English
• Published: 11.04.1995
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS

In forming a semiconductor integrated circuit device, a field insulation film is formed on a substrate using a selective thermal oxidation process whereby openings are formed in the insulation film thereby exposing the substrate at certain predetermined active regions. A patterned insulation film is formed on the field insulation film so as to present contact holes corresponding to the openings in the field insulation film. Each of the contact holes has a first pair of opposed edges extending in a first direction and defined by interior edges of the field insulation film and a second pair of opposed edges extending in a second direction and defined by edges of the patterned insulation film. The resultant structure provides a reduced pitch of the contact holes in the second direction.