Method and apparatus for etching compound semiconductor

A compound semiconductor is etched by a step of substituting a composite element of a compound semiconductor with other element, thereby forming a compound layer on the surface of the compound semiconductor and a step of removing the compound layer from the surface. Etching depth is controlled not b...

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Bibliographic Details
Main Authors TAKATANI; SHINICHIRO, NAKAZAWA; MASATOSHI, KIKAWA; TAKESHI, KUSANO; CHUSHIROU
Format Patent
LanguageEnglish
Published 21.03.1995
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
SEMICONDUCTOR DEVICES
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Summary:A compound semiconductor is etched by a step of substituting a composite element of a compound semiconductor with other element, thereby forming a compound layer on the surface of the compound semiconductor and a step of removing the compound layer from the surface. Etching depth is controlled not by etching time, but by the number of runs (repetitions) of the etching step, and thus can be precisely controlled.
Bibliography:Application Number: US19930072407