Method of treating semiconductor materials

A method for treatment of semiconductor material wherein the material is exposed to electromagnetic radiation having a frequency in the range of the resonance frequency in order to alter the relative positions of interstitial impurity ions and lattice nodes of the interstitial ions. The intensity of...

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Bibliographic Details
Main Authors SKLYAREVICH; VLADISLAV E, BUNENKO; ANDREI I, SHEVELEV; MIKHAIL V, GUROSHEV; VYACHESLAV I
Format Patent
LanguageEnglish
Published 07.03.1995
Edition6
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:A method for treatment of semiconductor material wherein the material is exposed to electromagnetic radiation having a frequency in the range of the resonance frequency in order to alter the relative positions of interstitial impurity ions and lattice nodes of the interstitial ions. The intensity of the electric field is selected to be proportional to the value of activation barrier potential of the impurity ions. The method is useful in providing accelerated diffusion of a doping impurity, activation of the ions of an implanted impurity, or in creation of metallic ohmic contacts at the surface of the semiconductor material without heating of the semiconductor material.
Bibliography:Application Number: US19930052076