Epitaxial silicon membranes

The subject invention provides a silicon membrane material made from silicon that is epitaxially deposited at low temperatures greater than or equal to 500 DEG C. and doped with controlled amounts of boron and germanium. A silicon membrane structure is provided and made by one or more layers of ultr...

Full description

Saved in:
Bibliographic Details
Main Authors BASSOUS; ERNEST, URAM; KEVIN J, MEYERSON; BERNARD S
Format Patent
LanguageEnglish
Published 25.10.1994
Edition5
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
Online AccessGet full text

Cover

More Information
Summary:The subject invention provides a silicon membrane material made from silicon that is epitaxially deposited at low temperatures greater than or equal to 500 DEG C. and doped with controlled amounts of boron and germanium. A silicon membrane structure is provided and made by one or more layers of ultra thin epitaxially deposited silicon layers that are precisely controlled in both thickness and composition. At least one of the layers is doped with boron in a concentration range greater than 2x1020 atoms of boron per cubic centimeter of silicon, or with germanium in a concentration range greater than 5x1020 atoms of germanium per cubic centimeter of silicon, or with a combination of boron and germanium in these concentration ranges. A silicon membrane fabrication process is also provided which requires no additional masking film to protect the membrane surface during KOH etching of the bulk silicon substrate.
Bibliography:Application Number: US19930120290