PNPN semiconductor device capable of supporting a high rate of current change with time

• Main Author: BYATT; STEPHEN W
• Format: Patent
• Language: English
• Published: 31.05.1994
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A PNPN semiconductor device has an inner P-type region which includes at least one ridge which extends into its outer N-type region and terminates short of the outer boundary of the outer N-type region, the inner P-type region includes a formation which is substantially level with the outer boundary of the outer N-type region, and the device includes a terminal which contacts the outer N-type region and the formation of the inner P-type region. An alternative structure of the PNPN semiconductor device has an inner P-type region having at least one elongate sub-region, of higher conductivity than the remainder of the inner P-type region, lying along the junction between the inner P-type region and the outer N-type region, the formation which is substantially level with the outer boundary of the outer N-type region, and the terminal which contacts the formation and the outer N-type region.