Method of fabricating metal-electrode in semiconductor device

A method of fabricating a metal electrode of a semiconductor device that includes a substrate with unanodized and anodized metal layers thereon includes the steps of forming and patterning a first metal layer, which is not anodizable, to a first predetermined thickness on the substrate; forming and...

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Main Authors KIM; SANGSOO, KIM; HYUNGTAEK, SOHN; JEONGHA, BYUNGSEONG; BAE, KIM; NAMDEOG, JANG; INSIK
Format Patent
LanguageEnglish
Published 26.04.1994
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a metal electrode of a semiconductor device that includes a substrate with unanodized and anodized metal layers thereon includes the steps of forming and patterning a first metal layer, which is not anodizable, to a first predetermined thickness on the substrate; forming and patterning a second metal layer, which is anodized on the substrate forming a mask corresponding to said first metal layer on said second metal layer, and forming a flat surface by anodic oxidation in order that regions other than the first and second metal layers become an insulator having the same vertical elevation as the surface of the substrate. Various preferred embodiments and relationships between thickness of each layer for flattening by anodic oxidation are also given.
Bibliography:Application Number: US19930065562