High-speed memory with a limiter of the drain voltage of the cells

An erasable and electrically programmable memory with only few cells works at high speed in reading mode and is reliable. This is achieved by using a voltage limiter that limits the variation in the drain voltage of the memory cells.

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Bibliographic Details
Main Authors DEVIN; JEAN, YERO; EMILIO, COSTABELLO; CLAUDE
Format Patent
LanguageEnglish
Published 12.04.1994
Edition5
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:An erasable and electrically programmable memory with only few cells works at high speed in reading mode and is reliable. This is achieved by using a voltage limiter that limits the variation in the drain voltage of the memory cells.
Bibliography:Application Number: US19910663410