Method for controlling plasma processes

In accordance with the invention, a plasma generated within a plasma confinement chamber for use in manufacturing semiconductor devices is controlled by monitoring both the neutral gas pressure P and the neutral gas temperature T. The process parameters P and T are then adjusted to control P/Tn. In...

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Bibliographic Details
Main Authors GOTTSCHO; RICHARD A, AYDIL; ERAY S, JARNYK; MARK A, GREGUS; JEFFREY A
Format Patent
LanguageEnglish
Published 11.01.1994
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PLASMA TECHNIQUE
PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS
PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS
SEMICONDUCTOR DEVICES
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Summary:In accordance with the invention, a plasma generated within a plasma confinement chamber for use in manufacturing semiconductor devices is controlled by monitoring both the neutral gas pressure P and the neutral gas temperature T. The process parameters P and T are then adjusted to control P/Tn. In a preferred embodiment the pressure is adjusted to maintain P/T constant by adjusting the gas flow rate or the outlet pumping speed. The result is a plasma exhibiting enhanced stability over prolonged periods of time.
Bibliography:Application Number: US19920963150