Testing method for a semiconductor memory device

A Bi.CMOS semiconductor memory device is provided which includes an arrangement to simultaneously select a plurality of memory cells, followed by using a 3 bit Z addressing arrangement to determine a read or write operation for the simultaneously selected memory cells. To speed up the word line sele...

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Main Authors KOBAYASHI; YUTAKA, NOZOE; ATSUSHI, KINOSHITA; YOSHITAKA, TSUKADA; HIROMI, YANAGISAWA; KAZUMASA, NAKAMURA; MASAYUKI, OUCHI; YOSHIAKI, MIHASHI; KAZUO, ISHII; KYOKO, MATSUMOTO; TETSUROU, WADA; SHOJI, UDAGAWA; TETSU, OHTA; TATSUYUKI, MIWA; HITOSHI, KITSUKAWA; GORO
Format Patent
LanguageEnglish
Published 04.01.1994
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
CONTROLLING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
REGULATING
SEMICONDUCTOR DEVICES
STATIC STORES
SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
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Summary:A Bi.CMOS semiconductor memory device is provided which includes an arrangement to simultaneously select a plurality of memory cells, followed by using a 3 bit Z addressing arrangement to determine a read or write operation for the simultaneously selected memory cells. To speed up the word line selection, a static selection type operation is used with the word line selecting voltage being greater than signal amplitude of the data lines during the write operation. Also, to speed up the read operation, separate common I/O lines are provided for the read and write operations. Read signals are transmitted as current signals, and then converted to voltage signals for improving reading speed. Also, improved arrangements are provided for resistance structure, logic circuitry, input circuitry, fuse cutting circuitry, drive circuitry, power circuitry, electrostatic protection circuitry, layout structure and testing methods for the semiconductor device.
Bibliography:Application Number: US19920818274