METHOD FOR MAKING LOW DEFECT DENSITY SEMICONDUCTOR HETEROSTRUCTURE AND DEVICES MADE THEREBY

Applicants have discovered that by growing germanium-silicon alloy at high temperatures in excess of about 850 DEG C and increasing the germanium content at a gradient of less than about 25% per micrometer, one can grow on silicon large area heterostructures of graded GexSi1-x alloy having a low lev...

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Bibliographic Details
Main Authors FITZGERALD, JR.; EUGENE A, BRASEN; DANIEL, GREEN; MARTIN L, XIE; YA-HONG
Format Patent
LanguageEnglish
Published 22.06.1993
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Applicants have discovered that by growing germanium-silicon alloy at high temperatures in excess of about 850 DEG C and increasing the germanium content at a gradient of less than about 25% per micrometer, one can grow on silicon large area heterostructures of graded GexSi1-x alloy having a low level of threading dislocation defects. With low concentrations of germanium (.10</= x </=.50), the heterolayer can be used as a substrate for growing strained layer silicon devices such as MODFETS. With high concentrations of Ge (.65 </= x </= 1.00) the heterolayer can be used on silicon substrates as a buffer layer for indium gallium phosphide devices such as light emitting diodes and lasers. At concentrations of pure germanium (X=1.00), the heterolayer can be used for GaAs or GaAs/AlGaAs devices.
Bibliography:Application Number: US19910690429