Method of fabricating thin film transistor

A method of fabricating a thin film transistor wherein electrode wirings and an insulating layer are fabricated by depositing on a substrate an aluminum alloy layer to become electrode wiring. An Al2O3 layer having a given thickness is then formed by a first anodization of the aluminum alloy layer....

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Bibliographic Details
Main Authors BAE; BYUNGSEONG, KIM; NAMDEOG, JANG; INSIK
Format Patent
LanguageEnglish
Published 13.04.1993
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a thin film transistor wherein electrode wirings and an insulating layer are fabricated by depositing on a substrate an aluminum alloy layer to become electrode wiring. An Al2O3 layer having a given thickness is then formed by a first anodization of the aluminum alloy layer. Photoresist patterns are then formed that correspond to the electrode wirings on the Al2O3 layer so as to pattern the aluminum alloy layer. The Al2O3 and aluminum alloy layer is then dry-etched to a predetermined depth using the photoresist patterns as a mask. A second anodization is carried out to form the Al2O3 layer up to the surface of the substrate between the electrode wirings, using the photoresist patterns as a mask, whereby the new anodized Al2O3 layer is used as an insulating layer of the electrode wirings.
Bibliography:Application Number: US19910812112