METHOD OF GROWING MIXED CRYSTALS FROM MELTS OF OXIDIC MULTICOMPONENT SYSTEMS

A method of growing mixed crystals having two lattice sites, each of which having a different number of adjoining oxygen ions, from melts of oxidic multicomponent systems, homogeneous mixed crystals being grown in such a manner that the cations which are to populate the first lattice site having the...

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Bibliographic Details
Main Authors VOELKEL; ERICH, MATEIKA; DIETER
Format Patent
LanguageEnglish
Published 03.11.1992
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:A method of growing mixed crystals having two lattice sites, each of which having a different number of adjoining oxygen ions, from melts of oxidic multicomponent systems, homogeneous mixed crystals being grown in such a manner that the cations which are to populate the first lattice site having the largest number of adjoining oxygen ions and the cations which are to populate the second lattice site having the second largest number of adjoining oxygen ions are selected in such a manner that the ratio between the average ion radii of the cations on the first lattice site and the average ion radii of the cations on the second lattice site ranges from 2.2 to 2.5.
Bibliography:Application Number: US19910650397