SEMICONDUCTOR DEVICE

There is a semiconductor device in which an n-type layer formed on a p+-type substrate is divided into first and second device forming regions by an isolation region and drive circuit devices and an output circuit device are respectively formed in these first and second device forming regions. The o...

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Bibliographic Details
Main Authors KURAMOTO; TSUYOSHI, OHATA; YU
Format Patent
LanguageEnglish
Published 12.11.1991
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:There is a semiconductor device in which an n-type layer formed on a p+-type substrate is divided into first and second device forming regions by an isolation region and drive circuit devices and an output circuit device are respectively formed in these first and second device forming regions. The output circuit device is a conductivity modulated MOS transistor having the p+-type substrate as a drain and the second device forming regoin as a high resistance region whose conductivity is modulated.
Bibliography:Application Number: US19890436004