Trench isolation process

The disclosure relates to the article and a method of forming a field oxide which extends over an isolation trench and the adjacent substrate wherein a portion of the trench insulating sidewall at the top region thereof is removed and replaced by polysilicon. The exposed silicon on the substrate and...

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Bibliographic Details
Main Author TENG; CLARENCE W
Format Patent
LanguageEnglish
Published 29.10.1991
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The disclosure relates to the article and a method of forming a field oxide which extends over an isolation trench and the adjacent substrate wherein a portion of the trench insulating sidewall at the top region thereof is removed and replaced by polysilicon. The exposed silicon on the substrate and adjacent polysilicon are than oxidized to form the field oxide which is continuous, disposed above and contacts the remaining sidewall insulator in the trench.
Bibliography:Application Number: US19900605818