ALIGNMENT METHOD FOR PATTERNING

There is provided an alignment method for the patterning used in the lithographic process for semiconductor devices. This alignment method includes the steps of irradiating an alignment light onto a positioning mark portion (30-32) on a resist-coated semiconductor substrate, and performing positioni...

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Bibliographic Details
Main Authors URAYAMA; KAZUHIKO, TARUI; ATSUSHI, KAMATA; YUTAKA
Format Patent
LanguageEnglish
Published 22.10.1991
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:There is provided an alignment method for the patterning used in the lithographic process for semiconductor devices. This alignment method includes the steps of irradiating an alignment light onto a positioning mark portion (30-32) on a resist-coated semiconductor substrate, and performing positioning on the basis of the resultant intensity of rays of reflected light of the alignment light reflected by the surface of the resist (10) and the boundary surface between the resist (10) and the mark portion (30-32), wherein there is used a resist (10) to which a chemical material having a conspicuous light absorption characteristic in a wavelength band of the alignment light is added.
Bibliography:Application Number: US19900547332