High power photoconductor bulk GaAs switch

A photoconductive switch with a low threshold energy, high voltage capability and fast rise time consisting of a semiconductive substrate comprised primarily of gallium arsenide, patterned electrodes masked onto the substrate on opposite sides, a power supply and a laser that introduces laser light...

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Bibliographic Details
Main Authors KIM; ANDERSON H, YOUMANS; ROBERT J, ZETO; ROBERT J, DORNATH-MOHR; MICHELLE A, WEINER; MAURICE, WADE; MELVIN J
Format Patent
LanguageEnglish
Published 02.07.1991
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A photoconductive switch with a low threshold energy, high voltage capability and fast rise time consisting of a semiconductive substrate comprised primarily of gallium arsenide, patterned electrodes masked onto the substrate on opposite sides, a power supply and a laser that introduces laser light via fiber optic bundles to the substrate and parallel to the applied electric field.
Bibliography:Application Number: US19900532786