Lateral high-voltage transistor suitable for use in emitter followers

A semiconductor device comprising a substrate (2) of a first conductivity type, a semiconductor layer (3) of the second opposite conductivity type disposed thereon and a lateral high-voltage transistor provided therein and located above a buried layer (8) of the second conductivity type. Between the...

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Bibliographic Details
Main Author LUDIKHUIZE; ADRIANUS W
Format Patent
LanguageEnglish
Published 22.01.1991
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device comprising a substrate (2) of a first conductivity type, a semiconductor layer (3) of the second opposite conductivity type disposed thereon and a lateral high-voltage transistor provided therein and located above a buried layer (8) of the second conductivity type. Between the base zone (6) and the surface-adjoining collector contact zone (9) is situated a FET having a gate electrode (10, 40) separated from the semiconductor layer (3) by a barrier layer (11, 41). According to the invention, the gate electrode (10, 40) is electrically connected to the emitter (7). As a result, also with the use of the transistor in emitter follower arrangement in the situation in which the emitter (7) is substantially at collector potential the emitter-collector current is not pinched off.
Bibliography:Application Number: US19880262561