Thin film deposition system

• Main Authors: SETOYAMA; EIJI, KAMEI; MITSUHIRO
• Format: Patent
• Language: English
• Published: 22.01.1991
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A thin film deposition system for depositing a thin film on a substrate by sputtering is characterized in that a substrate holder for holding thereon the substrate is transferred by a transfer mechanism from or to a film deposition position to or from another position such as another chamber different from the film deposition chamber, an electrode for applying bias voltage of radio frequency to the substrate or substrate holder is axially movable relatively to the substrate holder so that the electrode can be contacted with or discontact from the substrate holder, and a grounded shield is provided so as to cover the electrode and the substrate holder with a gap thereby shielding radio frequency from the electrode and the substrate holder to prevent formation of glow discharge between a wall of the vacuum chamber and the electrode or the substrate holder.