Percolating cermet thin film thermistor

A cermet thin film resistor having small particles of a refractory metal embedded in a ceramic insulator at compositions near the percolation transition. The cermets are produced by co-deposition in a dual-electron beam evaporator. The refractory metal is typically Mo or Pt. The insulator is typical...

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Bibliographic Details
Main Authors GERSHENFELD; NEIL, MANTESE; JOSEPH V, SWARTZ; ERIC T, WEBB; WATT W, VANCLEVE; JEFFREY E
Format Patent
LanguageEnglish
Published 06.03.1990
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRICITY
RESISTORS
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Summary:A cermet thin film resistor having small particles of a refractory metal embedded in a ceramic insulator at compositions near the percolation transition. The cermets are produced by co-deposition in a dual-electron beam evaporator. The refractory metal is typically Mo or Pt. The insulator is typically a Al2O3, although other insulators, for example SiO2 may be used. Deposition occurs onto a suitable substrate such as a sapphire under an oxygen environment, typically 10-5 Torr O2 with the stage heated in the range of typically 400 DEG C. Such is done to increase the size of the metallic regions. The microstructure is 10-50 ANGSTROM embedded metal in the ceramic. The resulting films are in the range of 1500 ANGSTROM thick which provides a film having a typical resistivity of 400 m OMEGA - cm which may then be patterned using lithography techniques to form two or four terminal resistors.
Bibliography:Application Number: US19880253027