Metal-organic chemical vapor deposition

An MOCVD deposition technique wherein the pressure of reagent vapors within the reaction vessel (1) is maintained at a reduced pressure in the range 10-2 to DIFFERENCE 10 millibars and contained mounted substrates (15) are heated non-inductively e.g. by an electric resistance circumferential furnace...

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Bibliographic Details
Main Authors GRIFFITHS; RICHARD J. M, BRADLEY; RODNEY R
Format Patent
LanguageEnglish
Published 23.01.1990
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Summary:An MOCVD deposition technique wherein the pressure of reagent vapors within the reaction vessel (1) is maintained at a reduced pressure in the range 10-2 to DIFFERENCE 10 millibars and contained mounted substrates (15) are heated non-inductively e.g. by an electric resistance circumferential furnace (5). In the above pressure range, high diffusivity of the reagent vapors ensures exposure of the substrates (15) to a uniform reagent mixture. A large number of substrates (15) may be processed simultaneously. As heating is non-inductive, an inert mounting (17) can be utilized avoiding the introduction of contaminants (e.g. carbon) into the deposited film.
Bibliography:Application Number: US19860873562