Conical-frustum sputtering target and magnetron sputtering apparatus

• Main Authors: SHIMIZU; TAMOTSU, NISHIJIMA; HIKARU, OYAMADA; TAKESHI, KOBAYASHI; SHIGERU
• Format: Patent
• Language: English
• Published: 31.05.1988
• Edition: 4
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A conical-frustum-sputtering target for use in a magnetron sputtering apparatus for forming a film on a planar substrate. The sputtering target includes a target member having at least a conical-frustum-shaped surface including a first surface portion parallel to a center portion of the planar substrate and spaced a first distance therefrom, a second surface portion parallel to at least an extension of a peripheral portion of the planar substrate and being spaced a second distance therefrom wherein the second distance is less than the first distance, and at least one-third surface portion inclined with respect to the planar substrate for interconnecting the first surface portion and the second surface portion. By utilizing such a sputtering target, a film having a uniform thickness can be formed on a substrate having side steps and such can be utilized to deposit metallic thin film for a minute wiring pattern and can be applied to a larger substrate.