Method for patterning layer having high reflectance using photosensitive material

A method for patterning a layer having a high reflectance includes directly forming on a layer having a high reflectance a light-absorbing film having a ratio of transmitted light intensity to exposing incident light intensity of not more than 30% and forming a photosensitive material film on the li...

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Bibliographic Details
Main Authors UNENO; TSUNEHISA, KAMATA; YUTAKA, MIYAZAKI; SINJI
Format Patent
LanguageEnglish
Published 22.12.1987
Edition4
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A method for patterning a layer having a high reflectance includes directly forming on a layer having a high reflectance a light-absorbing film having a ratio of transmitted light intensity to exposing incident light intensity of not more than 30% and forming a photosensitive material film on the light-absorbing film. A selected region of the photosensitive material film is irradiated with the exposing incident light, and the photosensitive material film is developed to form a first pattern. The light-absorbing film is selectively etched using the first pattern as a mask so as to form a second pattern. Finally, the layer having the high reflectance is selectively etched using the second pattern as a mask.
Bibliography:Application Number: US19860878004