Integrated circuit trench cell

A two-device trench cell having a transistor surrounded by a capacitor. This combined capacitor and transistor cell can be used as a memory cell. The capacitor is first fabricated into the walls of a trench leaving a narrowed trench into which a vertical metal-oxide-semiconductor field-effect-transi...

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Bibliographic Details
Main Authors NGUYEN; BICH-YEN, PARRILLO; LOUIS C, TENG; KER-WEN
Format Patent
LanguageEnglish
Published 11.08.1987
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A two-device trench cell having a transistor surrounded by a capacitor. This combined capacitor and transistor cell can be used as a memory cell. The capacitor is first fabricated into the walls of a trench leaving a narrowed trench into which a vertical metal-oxide-semiconductor field-effect-transistor (MOSFET) may be fabricated. One of the plates of the capacitor doubles as a source/drain layer of the transistor.
Bibliography:Application Number: US19860864921