Semiconductor photodetector element

A semiconductor photodetector element has a three-dimensional multi-layer structure including a photoconductive layer for photoelectric conversion, a layer for binary conversion and amplification and a layer including a redundancy circuit so that the need for external reset and clock inputs can be o...

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Bibliographic Details
Main Authors NAKAMURA; TUTOMU, NAWAKI; MASARU, SHIRAISHI; MASARU
Format Patent
LanguageEnglish
Published 02.06.1987
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor photodetector element has a three-dimensional multi-layer structure including a photoconductive layer for photoelectric conversion, a layer for binary conversion and amplification and a layer including a redundancy circuit so that the need for external reset and clock inputs can be obviated and correct image information can be expected even if there are defective cells among the photodetection conversion cells.
Bibliography:Application Number: US19850716372