Overcoated amorphous silicon imaging members

Disclosed is imaging member comprised of a supporting substrate, a blocking layer of hydrogenated amorphous silicon with dopants, a hydrogenated amorphous silicon photoconductive layer, a first overcoating layer of nonstoichiometric silicon nitride with from between 5 to 33 atomic percent of nitroge...

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Bibliographic Details
Main Authors PAI; DAMODAR M, DEFEO; PAUL J
Format Patent
LanguageEnglish
Published 05.05.1987
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
ELECTROPHOTOGRAPHY
HOLOGRAPHY
MAGNETOGRAPHY
PHOTOGRAPHY
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:Disclosed is imaging member comprised of a supporting substrate, a blocking layer of hydrogenated amorphous silicon with dopants, a hydrogenated amorphous silicon photoconductive layer, a first overcoating layer of nonstoichiometric silicon nitride with from between 5 to 33 atomic percent of nitrogen and 95 to 67 atomic percent of silicon, and a second overcoating layer thereover of near stoichiometric silicon nitride with from between 33 to 57 atomic percent of nitrogen, and 67 to 43 atomic percent of silicon.
Bibliography:Application Number: US19850781604