Overcoated amorphous silicon imaging members
Disclosed is imaging member comprised of a supporting substrate, a blocking layer of hydrogenated amorphous silicon with dopants, a hydrogenated amorphous silicon photoconductive layer, a first overcoating layer of nonstoichiometric silicon nitride with from between 5 to 33 atomic percent of nitroge...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
05.05.1987
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Edition | 4 |
Subjects | |
Online Access | Get full text |
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Summary: | Disclosed is imaging member comprised of a supporting substrate, a blocking layer of hydrogenated amorphous silicon with dopants, a hydrogenated amorphous silicon photoconductive layer, a first overcoating layer of nonstoichiometric silicon nitride with from between 5 to 33 atomic percent of nitrogen and 95 to 67 atomic percent of silicon, and a second overcoating layer thereover of near stoichiometric silicon nitride with from between 33 to 57 atomic percent of nitrogen, and 67 to 43 atomic percent of silicon. |
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Bibliography: | Application Number: US19850781604 |