Band-gap reference circuit for use with CMOS IC chips

• Main Author: BROKAW; ADRIAN P
• Format: Patent
• Language: English
• Published: 11.11.1986
• Edition: 4
• Subjects: CONTROLLING; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; PHYSICS; REGULATING; SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS

A band-gap reference circuit having a pair of transistors operated at different current densities to produce a positive temperature coefficient (TC) signal proportional to the DELTA VBE of the two transistors and combined with a negative TC voltage derived from the VBE of one of the transistors to produce a composite signal substantially invariant with temperature. The DELTA VBE signal component is increased in magnitude by connecting resistor string bias circuit to each of the transistors, to effectively multiply the VBE of each transistor, and thereby multiply the DELTA VBE signal. The composite signal is sensed in the emitter circuits of the two transistors, so that it is unnecessary to access the collectors of the transistors, thereby making it readily possible to use the circuit with CMOS IC devices.