Image sensor

• Main Authors: OZAWA; TAKASHI, TAKENOUCHI; MUTSUO
• Format: Patent
• Language: English
• Published: 13.05.1986
• Edition: 4
• Subjects: BASIC ELECTRIC ELEMENTS; CALCULATING; COMPUTING; COUNTING; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; IMAGE DATA PROCESSING OR GENERATION, IN GENERAL; PHYSICS; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

In the image sensor, thin film transistors are provided in the one-to-one correspondence to the photoelectric conversion element these thin film transistors being divided into blocks of adjoining ones whose gate electrodes are mutually connected, and the switching signal is sequentially supplied to each mutually connected gate electrodes of the same block. Further, the output electrodes of those thin film transistors located in the corresponding positions in each odd and even numbered blocks are mutually connected, and the charge transfer circuits comprising the MOS transistors are provided corresponding to respective common connection line groups of odd numbered block and even numbered block. By this construction, at the time of picking up the outputs of the photoelectric conversion elements, the switching period for the thin film transistors can be retained as long as the original reading time of a plurality of the photoelectric conversion elements corresponding to a plurality of the thin film transistors whose gate electrodes are mutually connected, and therefore the speed of outputting read signal is determined soley by the MOS transistor switching speed. In addition, the number of the connection lines required may be as small as the number of the common connection lines.