Dipping liquid phase epitaxy for HgCdTe

• Main Author: WAN; CHANG-FENG
• Format: Patent
• Language: English
• Published: 04.02.1986
• Edition: 4
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

For HgCdTe liquid phase epitaxy (LPE), in situ differential thermal analysis apparatus is used to precisely monitor the liquidus temperature of each HgCdTe melt. The neutral body, e.g. a slug of copper enclosed in a silica ampoule, is placed near the LPE reactor in a furnace. During heating or cooling, differential sensing of a pair of thermocouples (in the melt and in the neutral body) will show an accelerated change at transformation points, since at these points the temperature of the melt will be changed by the energy of the physical change, while that of the neutral body remains subject only to passive heat transfer. Thus, the actual liquidus temperature of each melt can be measured with extreme precision, and isothermal or programmed cooling methods of LPE can be precisely and reliably controlled under production conditions.