Original reading device

• Main Authors: OZAWA; TAKASHI, TAKENOUCHI; MUTSUO
• Format: Patent
• Language: English
• Published: 21.01.1986
• Edition: 4
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

An original reading device of the close-contact type such as may be used in a facsimile system in which the number of interconnections required for the device is made quite small and slow switching times of thin film transistors employed in the device are tolerated. Thin film transistors have input electrodes connected to corresponding photoelectric conversion elements. The thin film transistors are divided into a plurality of ordered groups with gate electrodes of each of the thin film transistors within each group being connected together. A first shift register applies first switching signals to connection points of the gate electrodes of each of the groups in time sequence. Output electrodes of the even- and odd-ordered groups of the thin film transistors are connected to corresponding lines of first and second sets of connecting lines, respectively. Temporary storing means, in the form of stray capacitors, are connected to each of the connecting lines. MOS transistors, which are activated in sequence by a second shift register, transfer the signal charges temporarily stored in the temporary storing means to an output terminal.