Ballistic transport-type semiconductor device for deflecting electrons

A semiconductor device having a structure originating from field effect transistors of a vertical configuration type in which a deflection is brought about between the electrons so as to be able to switch in an ultra-rapid manner a current or signal, or produce a phase shift. In a very thin monocrys...

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Bibliographic Details
Main Author JAY; PAUL R
Format Patent
LanguageEnglish
Published 07.01.1986
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device having a structure originating from field effect transistors of a vertical configuration type in which a deflection is brought about between the electrons so as to be able to switch in an ultra-rapid manner a current or signal, or produce a phase shift. In a very thin monocrystalline gallium arsenide film, a certain number of cells are produced for this purpose and each of them includes a cathode, a first gate electrode embedded in the semiconductor material, a second gate electrode and at least one anode electrode serving as a target for the ballistic electrons. The electron beam is deflected as a function of the different polarizations applied to the gate electrodes.
Bibliography:Application Number: US19820340965