Polymethyl methacrylate compatible silicon dioxide complexing agent

• Main Authors: BARTLETT; KEITH G, CAOLO; MARY A
• Format: Patent
• Language: English
• Published: 02.04.1985
• Edition: 3
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS; CHEMISTRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GLASS; JOINING GLASS TO GLASS OR OTHER MATERIALS; METALLURGY; MINERAL OR SLAG WOOL; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS; SURFACE TREATMENT OF GLASS; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS

An etching solution for the dissolution of silicon dioxide through a portable conformable mask, with PMMA as the etch stop layer, has been developed which eliminates resist lifting and non-uniform lateral etching, thereby providing the improved oxide edge definitions required for 1 micron line geometries in VLSI chips.