Method of making a semiconductor device having protected edges

An n- silicon layer is epitaxially grown on an oxide film with predetermined openings disposed on one main face of an N+ silicon substrate to form single crystalline portions on the openings and polycrystalline portions on the oxide film. Ion implantation and thermal annealing is used to convert the...

Full description

Saved in:
Bibliographic Details
Main Authors OOGA; HIROTOMO, SAKURAI; HIROMI
Format Patent
LanguageEnglish
Published 19.02.1985
Edition3
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An n- silicon layer is epitaxially grown on an oxide film with predetermined openings disposed on one main face of an N+ silicon substrate to form single crystalline portions on the openings and polycrystalline portions on the oxide film. Ion implantation and thermal annealing is used to convert the polycrystalline portions to P+ external base regions and form P+ internal base regions in the single-crystalline portions. Arsenic ions are selectively implanted into the internal base regions to form n+ emitter regions. Then, base and emitter electrodes are formed on the external base and emitter regions to be electrically insulated from one another by an oxide film and a collector electrode is formed on the other main face of the substrate.
Bibliography:Application Number: US19820404051