Transferred electron devices

A transferred electron device includes a novel cathode giving improvement in the dc to microwave conversion efficiency over a wide temperature range. The cathode comprises a narrow n+ semiconductor zone next to the device active region or layer and, next to the n+ zone, a high field contact which in...

Full description

Saved in:
Bibliographic Details
Main Authors GRAY; KENNETH W, PATTISON; JAMES E, REES; HUW D
Format Patent
LanguageEnglish
Published 22.11.1983
Subjects
ELECTRICITY
Online AccessGet full text

Cover

More Information
Summary:A transferred electron device includes a novel cathode giving improvement in the dc to microwave conversion efficiency over a wide temperature range. The cathode comprises a narrow n+ semiconductor zone next to the device active region or layer and, next to the n+ zone, a high field contact which includes a region of semiconductor.
Bibliography:Application Number: US19770830950