Transferred electron devices
A transferred electron device includes a novel cathode giving improvement in the dc to microwave conversion efficiency over a wide temperature range. The cathode comprises a narrow n+ semiconductor zone next to the device active region or layer and, next to the n+ zone, a high field contact which in...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
22.11.1983
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Subjects | |
Online Access | Get full text |
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Summary: | A transferred electron device includes a novel cathode giving improvement in the dc to microwave conversion efficiency over a wide temperature range. The cathode comprises a narrow n+ semiconductor zone next to the device active region or layer and, next to the n+ zone, a high field contact which includes a region of semiconductor. |
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Bibliography: | Application Number: US19770830950 |