System for transferring a fine pattern onto a target
An X-ray system for transferring a fine pattern onto a target has a mask, on the surface of which is formed an X-ray absorbing layer in a predetermined pattern and which is made of a single crystal of high regularity. Parallel monochromic X-rays become incident on the lattice plane of the single cry...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
18.10.1983
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Subjects | |
Online Access | Get full text |
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Summary: | An X-ray system for transferring a fine pattern onto a target has a mask, on the surface of which is formed an X-ray absorbing layer in a predetermined pattern and which is made of a single crystal of high regularity. Parallel monochromic X-rays become incident on the lattice plane of the single crystal at an angle theta . Diffraction X-rays emerging from the lattice plane are projected onto the surface of a wafer in the normal direction. An X-ray resist layer is formed on the surface of the wafer. Since incident X-rays and diffraction X-rays are absorbed by the X-ray absorbing layer on the mask, the pattern defined by the layer is projected on the X-ray resist layer. |
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Bibliography: | Application Number: US19810332203 |