Method of manufacturing single crystals

• Main Authors: BERBEN; THEODORUS J, DAMEN; JOHANNES P. M
• Format: Patent
• Language: English
• Published: 05.04.1983
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GLASS; INORGANIC CHEMISTRY; MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES; METALLURGY; MINERAL OR SLAG WOOL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A method of manufacturing a single crystal of a composite oxide by gradual solidification of a melt with solidification starting from a seed crystal which initially is in contact with the melt, is provided wherein to obtain a single crystal having a composition which is as homogeneous as possible (homogeneous within 1 mol. %) the following measures are taken: first, initially the melt consists of no more than 25% by weight of the single crystal to be grown; and second, during the solidification process molten material is added to the melt at the same rate and having the same composition as material solidifies out from the melt.