Semiconductor radiation detector

A radiation detector includes a detection element having a single crystal silicon substrate with an impurity concentration of less than 1x1014 cm-3, a metal layer formed on one surface of the substrate to form a surface barrier therebetween and an electrode layer mounted on the opposite surface of t...

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Main Authors KOBAYASHI, TETSUJI, SUGITA, TOHRU, MATSUO, NOBORU
Format Patent
LanguageEnglish
Published 01.07.1980
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASUREMENT OF NUCLEAR OR X-RADIATION
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Abstract A radiation detector includes a detection element having a single crystal silicon substrate with an impurity concentration of less than 1x1014 cm-3, a metal layer formed on one surface of the substrate to form a surface barrier therebetween and an electrode layer mounted on the opposite surface of the substrate. Between the metal layer and electrode layer there is not applied a bias.
AbstractList A radiation detector includes a detection element having a single crystal silicon substrate with an impurity concentration of less than 1x1014 cm-3, a metal layer formed on one surface of the substrate to form a surface barrier therebetween and an electrode layer mounted on the opposite surface of the substrate. Between the metal layer and electrode layer there is not applied a bias.
Author SUGITA, TOHRU
KOBAYASHI, TETSUJI
MATSUO, NOBORU
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Snippet A radiation detector includes a detection element having a single crystal silicon substrate with an impurity concentration of less than 1x1014 cm-3, a metal...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASUREMENT OF NUCLEAR OR X-RADIATION
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
Title Semiconductor radiation detector
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