Semiconductor radiation detector

A radiation detector includes a detection element having a single crystal silicon substrate with an impurity concentration of less than 1x1014 cm-3, a metal layer formed on one surface of the substrate to form a surface barrier therebetween and an electrode layer mounted on the opposite surface of t...

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Bibliographic Details
Main Authors KOBAYASHI, TETSUJI, SUGITA, TOHRU, MATSUO, NOBORU
Format Patent
LanguageEnglish
Published 01.07.1980
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASUREMENT OF NUCLEAR OR X-RADIATION
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:A radiation detector includes a detection element having a single crystal silicon substrate with an impurity concentration of less than 1x1014 cm-3, a metal layer formed on one surface of the substrate to form a surface barrier therebetween and an electrode layer mounted on the opposite surface of the substrate. Between the metal layer and electrode layer there is not applied a bias.
Bibliography:Application Number: US19780877942