Thin silicon film electronic device

• Main Authors: DUMBAUGH, WILLIAM H JR, ALPHA, JAMES W
• Format: Patent
• Language: English
• Published: 25.12.1979
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GLASS; JOINING GLASS TO GLASS OR OTHER MATERIALS; METALLURGY; MINERAL OR SLAG WOOL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS; SURFACE TREATMENT OF GLASS; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The present invention is related to the fabrication of electronic devices wherein a thin film of silicon is deposited upon a substrate. More particularly, the invention is directed to such devices wherein the substrate therefor is an alkaline earth metal aluminosilicate glass consisting essentially, by weight, of about 55-75% SiO2, 5-25% Al2O3, and at least one alkaline earth metal oxide selected from the group consisting of 9-15% CaO, 14-20% SrO, 18-26% BaO, and mixtures thereof in a total amount equivalent on a molar basis to 9-15% CaO.