Semiconductor structure sensitive to pressure

A semiconductor pressure sensing device comprises a solid made as a AB1-xCx semiconductor structure composed of two semiconductor materials AB and AC and a means for measuring variations of electrical resistance of the solid in response to changes of the pressure applied thereto, which is electrical...

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Bibliographic Details
Main Authors LUKICHEVA; NATALYA I, SOKURENKO; JURY V, MYASOEDOV; VIKTOR V, KISTOVA; ELENA M, JUROVA; ELENA S, SINITSYN; EVGENY V, MASLOV; VADIM N, KOROBOV; OLEG E, BRONSHTEIN; IZIDOR K
Format Patent
LanguageEnglish
Published 20.02.1979
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:A semiconductor pressure sensing device comprises a solid made as a AB1-xCx semiconductor structure composed of two semiconductor materials AB and AC and a means for measuring variations of electrical resistance of the solid in response to changes of the pressure applied thereto, which is electrically connected to the solid, the semiconductor structure having a first group of layers possessing one value of x and a second group of layers possessing a second value of x and alternating with the layers of the first group.
Bibliography:Application Number: US19770781046