Method of improving ohmic contact through high-resistance oxide film
A novel method is described for improving the ohmic contact through a relatively high electrical-resistance oxide film formed on at least one of two materials joined together to provide a low-resistance electrical junction. A current pulse of sufficient magnitude and duration is directed through the...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
06.12.1977
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Subjects | |
Online Access | Get full text |
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