Method of improving ohmic contact through high-resistance oxide film

A novel method is described for improving the ohmic contact through a relatively high electrical-resistance oxide film formed on at least one of two materials joined together to provide a low-resistance electrical junction. A current pulse of sufficient magnitude and duration is directed through the...

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Bibliographic Details
Main Authors BOTTOM; VIRGIL E, CHRISTIAN; ROBERT E
Format Patent
LanguageEnglish
Published 06.12.1977
Subjects
BASIC ELECTRIC ELEMENTS
CURRENT COLLECTORS
ELECTRICITY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
LINE CONNECTORS
TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Summary:A novel method is described for improving the ohmic contact through a relatively high electrical-resistance oxide film formed on at least one of two materials joined together to provide a low-resistance electrical junction. A current pulse of sufficient magnitude and duration is directed through the junction so that the oxide film breaks down and so that normal operating currents can then pass through the junction between the two materials.
Bibliography:Application Number: US19760700756