Low coercivity iron-silicon material, shields, and process

• Main Authors: TAN; SWIE-IN, VALSTYN; ERICH PHILIPP, AINSLIE; NORMAN GEORGE, HEMPSTEAD; ROBERT DOUGLAS
• Format: Patent
• Language: English
• Published: 20.09.1977
• Subjects: ALLOYS; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; FERROUS OR NON-FERROUS ALLOYS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INDUCTANCES; INFORMATION STORAGE; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MAGNETS; METALLURGY; PHYSICS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS; TRANSFORMERS; TREATMENT OF ALLOYS OR NON-FERROUS METALS

Iron-silicon is sputtered onto a substrate to be used for a magnetic recording head from a target containing 4% to 7% of silicon with a substrate bias between -2.5 and -60 volts, anode-cathode spacing of about 1/2 to about 2 inches, a deposition rate of greater than 150A/min, a substrate temperature above 250 DEG C, an argon pressure above 10 microns, and a single film thickness greater than 0.4 micron, a laminated film thickness greater than 0.05 micron, and R.F. input power above 8 watts/in2.