Triple diffused logic elements

In a semiconductor structure, a semiconductor body of one conductivity type having a planar surface and a first region of opposite conductivity formed in said body and extending to said surface. Spaced second, third and fourth regions of one conductivity type are formed in said first region and exte...

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Bibliographic Details
Main Authors TUCCI; PATRICK A, RUSSELL; LEWIS K
Format Patent
LanguageEnglish
Published 25.01.1977
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Summary:In a semiconductor structure, a semiconductor body of one conductivity type having a planar surface and a first region of opposite conductivity formed in said body and extending to said surface. Spaced second, third and fourth regions of one conductivity type are formed in said first region and extend to said surface. Fifth and sixth regions of opposite conductivity are respectively formed entirely within said second and third regions and extend to said surface. In addition a seventh region of one conductivity type may be formed spaced from said second, third and fourth regions and an eighth region of opposite conductivity type formed entirely within said seventh region. A method for forming the semiconductor logic structure is also disclosed.
Bibliography:Application Number: US19740488754