SEMICONDUCTOR DEVICE

The materials or dimensions of a gate insulating film or a gate electrode of an insulated gate field effect type semiconductor device are made different, so as to provide a gate of two or more gate parts having different structures.

Saved in:
Bibliographic Details
Main Authors KOZAWA T,JA, MASUDA H,JA, NAGATA M,JA, MASUHARA T,JA
Format Patent
LanguageEnglish
Published 17.12.1974
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The materials or dimensions of a gate insulating film or a gate electrode of an insulated gate field effect type semiconductor device are made different, so as to provide a gate of two or more gate parts having different structures.
Bibliography:Application Number: US19720266043