STRESS SENSOR DIAPHRAGMS OVER RECESSED SUBSTRATES
A semiconductor layer to serve as a diaphragm is provided over a substrate having recesses therein. The recesses are formed after the semiconductor layer has been provided by differential etching. A convenient semiconductor layer is an epitaxially grown layer in which sensing elements are provided.
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Main Author | |
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Format | Patent |
Language | English |
Published |
10.12.1974
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor layer to serve as a diaphragm is provided over a substrate having recesses therein. The recesses are formed after the semiconductor layer has been provided by differential etching. A convenient semiconductor layer is an epitaxially grown layer in which sensing elements are provided. |
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Bibliography: | Application Number: US19730331934 |