STRESS SENSOR DIAPHRAGMS OVER RECESSED SUBSTRATES

A semiconductor layer to serve as a diaphragm is provided over a substrate having recesses therein. The recesses are formed after the semiconductor layer has been provided by differential etching. A convenient semiconductor layer is an epitaxially grown layer in which sensing elements are provided.

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Bibliographic Details
Main Author HARTLAUB J,US
Format Patent
LanguageEnglish
Published 10.12.1974
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Summary:A semiconductor layer to serve as a diaphragm is provided over a substrate having recesses therein. The recesses are formed after the semiconductor layer has been provided by differential etching. A convenient semiconductor layer is an epitaxially grown layer in which sensing elements are provided.
Bibliography:Application Number: US19730331934