SEMICONDUCTOR CHARGE TRANSFER DEVICES

Shift register devices of the type that transfer charge along a semiconductor wafer through the appropriate formation of successive potential wells in the wafer are described. Transferred charge is regenerated by designing the parameters of the device such that, if charge is to be transferred from o...

Full description

Saved in:
Bibliographic Details
Main Author SMITH G,US
Format Patent
LanguageEnglish
Published 25.09.1973
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:Shift register devices of the type that transfer charge along a semiconductor wafer through the appropriate formation of successive potential wells in the wafer are described. Transferred charge is regenerated by designing the parameters of the device such that, if charge is to be transferred from one storage region to the next, the potential well for causing the transfer is of sufficient value to cause avalanche breakdown; whereas if no charge is to be transferred, the potential well is insufficient to cause avalanche breakdown. Selective breakdown in this manner regenerates the charge being transferred through the production of additional current carriers.
Bibliography:Application Number: USD3761744