METHOD OF MAKING A HIGH FREQUENCY LIGHT EMITTING GaAs {11 {118 {11 P {11 {0 (0{21 X{21 0.6) DIODE

• Main Authors: ONO Y,JA, OGIRIMA M,JA, KURATA K,JA, SHINODA T,JA
• Format: Patent
• Language: English
• Published: 21.08.1973
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS

A method of making a high efficiency light emitting GaAs1-xPx (0<x<0.6) diode, wherein Zn is diffused as acceptor into an n-type crystal by using a diffusion source, whose composition lies, in a Ga-P-Zn phase diagram, in a triangular region, the three apices of which are Zn3P2, GaP and the point where the content in P is lowest in the region having a higher content in P among two liquid phase regions; a window through which light generated at a p-n junction formed therein can emerge from the crystal with high external quantum efficiency is thereby formed by an enrichment in P at the same time as the surface layer of an n-type GaAs1-xPx (0<x<0.6) crystal is converted into a p-type layer.